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STGD7NB60H
N-CHANNEL 7A - 600V - DPAK PowerMESHTM IGBT
TYPE STD7NB60H
s s s s s s s s
VCES 600 V
VCE(sat) < 2.8 V
IC 7A
s
HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCHT TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4 micro H family ANTIPARALLEL DIODE
3 1
DPAK
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM (s) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25C Collector Current (continuos) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 20 14 7 56 55 0.44 -65 to 150 150 Unit V V V A A A W W/C C C
July 2000
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THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ 2.27 100 1.5 C/W C/W C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol VBR(CES) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 Min. 600 10 100 100 Typ. Max. Unit V A A nA
ON (1)
Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250A VGE = 15V, IC = 7 A VGE = 15V, IC = 7 A, Tj =125C Min. 3 2.3 1.9 Typ. Max. 5 2.8 Unit V V V
DYNAMIC
Symbol gfs Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current VCE = 480V, IC = 7 A, VGE = 15V Vclamp = 480 V , Tj = 150C RG = 10 28 Test Conditions VCE = 25 V , IC =3 A VCE = 25V, f = 1 MHz, VGE = 0 Min. 3.5 Typ. 5 560 68 15 42 7.9 17.6 55 Max. Unit S pF pF pF nC nC nC A
SWITCHING ON
Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 7 A RG = 10 , VGE = 15 V VCC= 480 V, IC = 7 A RG=10 VGE = 15 V,Tj = 125C Min. Typ. 15 48 160 70 Max. Unit ns ns A/s J
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ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF
Symbol tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 3 A, RGE = 10 , VGE = 15 V Tj = 125 C Test Conditions Vcc = 480 V, IC = 7 A, RGE = 10 , VGE = 15 V Min. Typ. 85 20 75 70 85 130 150 50 110 110 220 290 Max. Unit ns ns ns ns
J J
ns ns ns ns
J J
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)
Thermal Impedance
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Output Characteristics Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collettor Current
Gate Threshold vs Temperature
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Normalized Breakdown Voltage vs Temperature Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
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Switching Off Safe Operating Area
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Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching
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TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
P032P_B
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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